ST, IBM to Collaborate on Chip Technology

STMicroelectronics and IBM have signed an agreement to collaborate on the development of next-generation process technology.
The agreement includes 32nm and 22nm complementary metal-oxide-semiconductor (CMOS) process-technology development, design enablement and advanced research adapted to the manufacturing of 300mm silicon wafers. In addition it includes both the core bulk CMOS technology and value-added derivative system-on-chip (SoC) technologies. The agreement between IBM and ST will also include collaboration on IP development and platforms to speed the design of SoC devices in these technologies.
As part of the agreement, each company will establish a technical development team at the other company's facility. For bulk CMOS development, ST will establish an R&D team in IBM's semiconductor R&D center in New York. At the same time, IBM will establish an R&D team at ST's 300mm wafer semiconductor R&D and fabrication facility in Crolles, France, where the two companies will jointly develop a variety of value-added derivative technologies, such as embedded memory and analog/RF. These technologies will be broadly applied in consumer and server markets and in wireless applications, such as cell phones and global positioning devices